Equivalência de SB

Pesquisa: SB
Resultados: 1840
Referências na base de dados

Ref.	Equiv.	Aplic.	ucb	uce	ueb	PAR
2SB100 PNP Germânio	AC125...126, AC151r, ACY 32, 2SB173 Eur: AC125 Jap: 2SB103 Usa: 2N1176A Rus: GT125J	30V, 0,05A, 0,1W	30V	-	10V	IC Min: HFE: 60T IC Max: FT: 500KHz Ptot: Pol:
2SB1000 PNP Silicio	BC869, BCX51...53, BCX69, 2SA1364 Eur: BCX51 Jap: 2SB736 Usa: 2N6730 Rus: KT639E	25V, 1A, 200MHz	25V	-	7V	IC Min: HFE: 140T IC Max: FT: 175MHz Ptot: Pol:
2SB1000A PNP Silicio	BCX51...53, 2SA1213, 2SA1364, 2SB766A Eur: BCX51 Jap: 2SB736 Usa: 2N6730 Rus: KT639E	=2SB1000, 30V	30V	-	7V	IC Min: HFE: 140T IC Max: FT: 175MHz Ptot: Pol:
2SB1001 PNP Silicio	2SA1314, 2SA1363, 2SB1121, 2SB1313 Jap: 2SB736 Usa: 2N6730 Rus: KT639E	20V, 2A, 150MHz	20V	-	7V	IC Min: HFE: 140T IC Max: FT: 40MHz Ptot: Pol:
2SB1002 PNP Silicio	BCX53, 2SB803...804, 2SB1025...26 Eur: BCX53 Jap: 2SB736 Usa: 2N6730 Rus: KT639E	70V, 1A, 150MHz	70V	-	7V	IC Min: HFE: 140T IC Max: FT: 32MHz Ptot: Pol:
2SB1003 Darlington PNP Silicio + Diodo	BD716, BDW24A, BDW54A, 2SB751 Eur: BD716 Usa: 2N6297 Rus: KT709A2	60V, 3A, 25W, B=5000	60V	40V	5V	IC Min: HFE: 5000T IC Max: FT: - Ptot: Pol:
2SB1003 Darlington PNP Silicio + Diodo	BD716, BDW24A, BDW54A, 2SB751 Eur: BD716 Usa: 2N6297 Rus: KT709A2	60V, 3A, 25W, B=5000	60V	40V	5V	IC Min: HFE: 5000T IC Max: FT: - Ptot: Pol:
2SB1004 Darlington PNP Silicio + Diodo	BDW24C, BDW54C, BDW64C, 2SB751B Eur: BDW24C Usa: 2N6297 Rus: KT709A2	100V, 4A, 30W, B=4000	100V	80V	5V	IC Min: HFE: 4000T IC Max: FT: - Ptot: Pol:
2SB1004 Darlington PNP Silicio + Diodo	BDW24C, BDW54C, BDW64C, 2SB751B Eur: BDW24C Usa: 2N6297 Rus: KT709A2	100V, 4A, 30W, B=4000	100V	80V	5V	IC Min: HFE: 4000T IC Max: FT: - Ptot: Pol:
2SB1005 Darlington PNP Silicio + Diodo	BD716, BDW24A, BDW54A, 2SB751 Eur: BD716 Usa: 2N6297 Rus: KT709A2	50V, 4A, 30W, B=3000	50V	50V	5V	IC Min: HFE: 3000T IC Max: FT: - Ptot: Pol: