Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
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MUR10120E Diodo Silicio |
BY 459-1500 | 1200V, 10A(Tc=125°), <175ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR10150E Diodo Silicio |
BY 459-1500 | 1500V, 10A(Tc=125°), <175ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR105 Diodo Silicio |
BYV26B...E, EGP 10A...G, FE 1A...H | 50V, 1A, <25ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR110 Diodo Silicio |
BYV26B...E, EGP 10B...G, FE 1B...H | =MUR 105, 100V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR1100(E) Diodo Silicio |
BYV26E | =MUR 190, 1000V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR115 Diodo Silicio |
BYV26B...E, EGP 10C...G, FE 1C...H | =MUR 105, 150V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR120 Diodo Silicio |
BYV26B...E, EGP 10D...G, FE 1D...H | 200V, 1A, <25ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR130 Diodo Silicio |
BYV26B...E, EGP 10F...G, FE 1F...H | =MUR 120, 300V | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR140 Diodo Silicio |
BYV26B...E, EGP 10G, FE 1H | =MUR 120, 400V, <50ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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MUR150 Diodo Silicio |
BYV26C | =MUR 120, 500V, <50ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
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