Equivalência de MG

Pesquisa: MG
Resultados: 59
Referências na base de dados

Ref.	Equiv.	Aplic.	ucb	uce	ueb	PAR
03P4MG(C) Tiristor	BT149/..., MCR606-..., TAG 59-...	400V, 0,3A(Tc=30°C), Igt/Ih <0,05/<5mA				IC Min: HFE: IC Max: FT: Ptot: Pol:
03P5MG(C) Tiristor	BT149/..., MCR606-..., TAG 59-...	=03 P4MG, 500V				IC Min: HFE: IC Max: FT: Ptot: Pol:
BY126(M,GP,MGP) Diodo Silicio	BY 127, BY 134, BY 226, 2N4005...4007	650V, 1A				IC Min: HFE: IC Max: FT: Ptot: Pol:
BY226(GP,MGP) Diodo Silicio	BY 253...255, BY 259/600, 1N5397...99	650V, 1,5A				IC Min: HFE: IC Max: FT: Ptot: Pol:
BY227(GP,MGP) Diodo Silicio	BY 255, BY 259/1000, BY 350/1300	=BY 226, 1250V				IC Min: HFE: IC Max: FT: Ptot: Pol:
FMG1A Transistor NPN Silicio + Resist.	-	Rb=Rbe=22kOhm, 50V, 30mA				IC Min: HFE: IC Max: FT: Ptot: Pol:
FMG10A Transistor NPN Silicio + Resist.	-	Rb=1k, Rbe=10kOhm, 50V, 100mA				IC Min: HFE: IC Max: FT: Ptot: Pol:
FMG11A Transistor NPN Silicio + Resist.	-	Rb=2,2k, Rbe=47kOhm, 50V, 100mA	50V	-	-	IC Min: HFE:80MIN IC Max: FT:140MHz Ptot: Pol:
FMG2A Transistor NPN Silicio + Resist.	-	Rb=Rbe=47kOhm, 50V, 30mA				IC Min: HFE: IC Max: FT: Ptot: Pol:
FMG3A Transistor NPN Silicio + Resist.	-	Rb=4,7kOhm, Rbe=-, 50V, 100mA				IC Min: HFE: IC Max: FT: Ptot: Pol: