| Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
|---|---|---|---|---|---|---|---|---|
|
BYW07/...(M) Diodo Silicio |
BYT60/..., BYW 08/..., BYW94/... |
50..200V, 70A, <50ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYW07/...R,RM Diodo Silicio |
BYT60/...R |
=BYW 07/..(M) |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW08/...(M) Diodo Silicio |
- |
50..200V, 80A, <60ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW10/... Diodo Silicio |
BY 218/..., BY 258/..., RGP 15A...M |
50..1000V, 1,5A, <400ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW10/...R Diodo Silicio |
BY 218/..., BY 258/..., RGP 15A...M |
=BYW 10/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW100/.. Diodo Silicio |
BYD74A...G, BYV27/..., EGP 20A...D |
50..200V, 1,5A, <35ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW11/... Diodo Silicio |
BYT61/..., BYX50/..., BYX66/... |
50..1000V, 6A, <400ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW11/...R Diodo Silicio |
BYT61/...R, BYX50/...R, BYX66/...R |
=BYW 11/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW12/... Diodo Silicio |
BYX30/... |
50..1000V, 15A, <400ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYW12/...R Diodo Silicio |
BYX30/...R |
=BYW 12/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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