| Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
|---|---|---|---|---|---|---|---|---|
|
BYD11D...M Diodo Silicio |
BYD33D...M, BYV26B...E, 1N4245...49 |
200..1000V, 0,58A |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD13D...M Diodo Silicio |
BYD33D...M, BYW52...56, 1N5060...5062 |
200..1000V, 1,4A |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD14D...M Diodo Silicio |
BYW52...56, 1N5060...5062 |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD17D...M Diodo Silicio |
BYD37D...M |
=BYD 13D..M, SMD |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD31D...M Diodo Silicio |
BYD33D...N, BYV26B...E, BYV95...96/... |
200..1000V, 0,4A, <300ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD33D...M Diodo Silicio |
BYM26A...E, BYV36A...E, BYV95...96/... |
200..1000V, 1,3A, <300ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD33U...V Diodo Silicio |
RGP 15-12...-14 |
=BYD 33D..M, 1200..1400V, <500ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD34D...M Diodo Silicio |
BYM26A...E, BYW95...96/... |
200..1000V, 1,8A, <300ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD37D...M Diodo Silicio |
- |
=BYD 33D..M, SMD |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYD43-20 Diodo Silicio |
- |
2kV, 0,64A, <300ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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