Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
---|---|---|---|---|---|---|---|---|
BYD11D...M Diodo Silicio |
BYD33D...M, BYV26B...E, 1N4245...49 | 200..1000V, 0,58A | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD13D...M Diodo Silicio |
BYD33D...M, BYW52...56, 1N5060...5062 | 200..1000V, 1,4A | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD14D...M Diodo Silicio |
BYW52...56, 1N5060...5062 | 200..1000V, 2A, 2,5µs | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD17D...M Diodo Silicio |
BYD37D...M | =BYD 13D..M, SMD | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD31D...M Diodo Silicio |
BYD33D...N, BYV26B...E, BYV95...96/... | 200..1000V, 0,4A, <300ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD33D...M Diodo Silicio |
BYM26A...E, BYV36A...E, BYV95...96/... | 200..1000V, 1,3A, <300ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD33U...V Diodo Silicio |
RGP 15-12...-14 | =BYD 33D..M, 1200..1400V, <500ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD34D...M Diodo Silicio |
BYM26A...E, BYW95...96/... | 200..1000V, 1,8A, <300ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD37D...M Diodo Silicio |
- | =BYD 33D..M, SMD | IC Min: HFE: IC Max: FT: Ptot: Pol: |
|||||
BYD43-20 Diodo Silicio |
- | 2kV, 0,64A, <300ns | IC Min: HFE: IC Max: FT: Ptot: Pol: |