Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
---|---|---|---|---|---|---|---|---|
BUP309 Transistor IBGT Canal N (MOS) Transistor Iso-Gate | - Eur: Jap: Usa: Rus: | 1700V, 25A, 310W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
BYP300 Diodo Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1200V, 4A(Tc=90°), 50ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
BYP301 Diodo Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1200V, 12A(Tc=90°), 80ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
BYP302 Diodo Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1200V, 25A(Tc=90°), 130ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
BYP303 Diodo Silicio Uso diverso | - Eur: Jap: Usa: Rus: | 1200V, 40A(Tc=90°), 140ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
EGP30A...G Diodo Silicio Chaveamento / retificador | BYV28/..., FE 3A...H Eur: Jap: Usa: Rus: | 50..400V, 3A, <50ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
FEP30AT...JT Diodo Silicio Retificador / chaveamento / potência / duplo | BYV74/..., MUR3005PT...3060PT Eur: Jap: Usa: Rus: | 50..600V, 30A, <50ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
FEP30AT...JT Diodo Silicio Retificador / chaveamento / potência / duplo | BYV74/..., MUR3005PT...3060PT Eur: Jap: Usa: Rus: | 50..600V, 30A, <50ns | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
FMP30N05 MOS FET Canal N Uso diverso | BUZ11...12, PRFZ42, 2SK856 Eur: Jap: Usa: Rus: | 50V, 30A, 100W, 0,05Ohm | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
FP3055LE MOS FET Canal N Uso diverso | =RFP 3055LE Eur: Jap: Usa: Rus: | =RFP 3055LE | HFE: Pc: Ic: Ft: CC:0 TJ: |
2N | 2SA | 2SB | 2SC | 2SD | 2SJ | 2SK | AC | AD | AF | AL | ASY | ASZ | BC | BCP | BCX | BCY | BD | BF | BG | BS |
BU | BUT | CA | DT | FT | GD | HP | IRF | IT | J | KSC | LM | M | MG | MPSA | MRF | PN | R | S | SGS | |
SS | STA | TIP | V | VN |
1N4000 | 1N46xx | AA | BA | BAR | BAS | BAT | BAV | BAW | BAX | BB | BY | BYD | BYT | BYV | BYZ | BYW | BYX | BYY |
EM | ER | ES | FE | FR | GP | LL | MA | MBR | MUR | OA | PBY | SB | SKE | SLA | SRP |