Equivalência de GP

Pesquisa: GP
Resultados: 138
Referências na base de dados

Ref.	Equiv.	Aplic.	PAR
BY398(GP,P) Diodo Silicio	BY 318/400, BYW14...16/400, RGP 30G...M	=BY 396, 400V	IC Min: HFE: IC Max: FT: Ptot: Pol:
BY399(GP,P) Diodo Silicio	BY 438, BYW14...16/800, RGP 30K...M	=BY 396, 800V	IC Min: HFE: IC Max: FT: Ptot: Pol:
BYW27/...(GP) Diodo Silicio	BY 126...127, BY 133...135, 1N4001...07	50..1000V, 1A	IC Min: HFE: IC Max: FT: Ptot: Pol:
BYX10(G,GP) Diodo Silicio	BY 231/1500, BY 269, EM516, GP 10Y	800/1600V, 0,36A	IC Min: HFE: IC Max: FT: Ptot: Pol:
BYX110GP Diodo Silicio	-	..400Hz, 9kV, 0,35A	IC Min: HFE: IC Max: FT: Ptot: Pol:
BYX55/...(GP,P) Diodo Silicio	BY 231/..., RGP 15G...M, MR814...818	350..600V, 1,2A, <750ns	IC Min: HFE: IC Max: FT: Ptot: Pol:
CGP NPN Silicio	=2SC5053	=2SC5053-P	IC Min: HFE: IC Max: FT: Ptot: Pol:
DTDG14GP Transistor NPN Silicio + Resist.	-	Rbe=10kOhm, 60V, 1A	IC Min: HFE: IC Max: FT: Ptot: Pol:
DTDK14GP NPN Silicio + Diodo	-	Rbe=10kOhm, -/10V, 2A	IC Min: HFE: IC Max: FT: Ptot: Pol:
EGP10A...G Diodo Silicio	BYV26B...E, FE 1A...H	50..400V, 1A, <50ns	IC Min: HFE: IC Max: FT: Ptot: Pol: