Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
---|---|---|---|---|---|---|---|---|
GES4121..4122 PNP Silicio Uso diverso | =2N4121...4122 Eur: Jap: Usa: Rus: | =2N4121..4122, 0,2W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES4248 PNP Silicio Uso geral | =2N4248 Eur: BC206 Jap: Usa: 2N4250 Rus: KT361K | =2N4248, 0,4W | 40V | 40V | 5V | HFE:50MIN Pc:200mW Ic:100mA Ft:40MHz CC:6 TJ:125>C | ||
GES4891..4894 Transístor Unijunção PNP (UJT) Uso diverso | =2N4891...4894 Eur: Jap: Usa: Rus: | =2N4891..4894 | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES5305..5308A NPN Silicio Uso diverso | =2N5305...5308(A) Eur: Jap: Usa: Rus: | =2N5305..5308(A), 0,9W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES5368..5375 Transistor Silicio NPN/PNP Uso diverso | =2N5368...5375 Eur: Jap: Usa: Rus: | =2N5368..5375, 0,36W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES5401 PNP Silicio Uso geral | =2N5401 Eur: Jap: Usa: Rus: | =2N5401 | 160V | 150V | 5V | HFE:60/240 Pc:200mW Ic:600mA Ft:100MHz CC:10 TJ:175>C | ||
GES5447..5451 Transistor Silicio NPN/PNP Uso diverso | =2N5447...5451 Eur: Jap: Usa: Rus: | =2N5447..5451, 0,36W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES5551 NPN Silicio Saida de video | =2N5551 Eur: Jap: Usa: Rus: | =2N5551 | 180V | 160V | 5V | HFE:80/250 Pc:200mW Ic:600mA Ft:100MHz CC:10 TJ:175>C | ||
GES5810..5823 Transistor Silicio NPN/PNP Uso diverso | =2N5810...5823 Eur: Jap: Usa: Rus: | =2N5810..5823, 0,5W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES5824..5828A NPN Silicio Uso diverso | =2N5824...5828(A) Eur: Jap: Usa: Rus: | =2N5824..5828(A), 0,36W | HFE: Pc: Ic: Ft: CC:0 TJ: |
2N | 2SA | 2SB | 2SC | 2SD | 2SJ | 2SK | AC | AD | AF | AL | ASY | ASZ | BC | BCP | BCX | BCY | BD | BF | BG | BS |
BU | BUT | CA | DT | FT | GD | HP | IRF | IT | J | KSC | LM | M | MG | MPSA | MRF | PN | R | S | SGS | |
SS | STA | TIP | V | VN |
1N4000 | 1N46xx | AA | BA | BAR | BAS | BAT | BAV | BAW | BAX | BB | BY | BYD | BYT | BYV | BYZ | BYW | BYX | BYY |
EM | ER | ES | FE | FR | GP | LL | MA | MBR | MUR | OA | PBY | SB | SKE | SLA | SRP |