Equivalência de BU


Pesquisar referência do fabricante




BU




Pesquisa: BU
Resultados 1549
Referências na base de dados
Ref.Equiv.Aplic.ucbuceuebPARBox CaixaPinos Pinout
BU104D
Transistor NPN Silicio + Diodo
Uso diverso / diodo interno
BU606D, BU608D
Eur: BU606D
Jap:
Usa:
Rus:
=BU 104400V150V10VHFE:7MIN
Pc:85W
Ic:7A
Ft:10MHz
CC:-
TJ:150>C
Caixa Pinos BU104D Pinos-Pinout BU104D
BU104DP
Transistor NPN Silicio + Diodo
Uso diverso / diodo interno
BU406D, BU408D, 2SC3176
Eur: BU406D
Jap:
Usa:
Rus:
=BU 104 P400V150V7VHFE:7MIN
Pc:50W
Ic:7A
Ft:10MHz
CC:-
TJ:150>C
Caixa Pinos BU104DP Pinos-Pinout BU104DP
BU104P
NPN Silicio
Uso diverso
BU406, BU408, 2SC3175, 2SC3591
Eur: BU406
Jap:
Usa:
Rus:
=BU 104, 50W400V150V7VHFE:10/50
Pc:50W
Ic:7A
Ft:10MHz
CC:-
TJ:150>C
Caixa Pinos BU104P Pinos-Pinout BU104P
BU105
NPN Silicio
Estágio horizontal - TV
BU205, BU208(A), 2SC2928, 2SD350(A)
Eur: BU205
Jap:
Usa:
Rus:
1500V, 2,5A, 10W(Tc=90°)750V400V5VHFE:2T
Pc:10W
Ic:2.5A
Ft:3MHz
CC:-
TJ:115>C
Caixa Pinos BU105 Pinos-Pinout BU105
BU106
NPN Silicio
Estágio horizontal - TV
BU109, BUY 69C, BUY 70C, BU606...608
Eur: BUY69C
Jap:
Usa:
Rus: KT812B
325/140V, 10A, 50W325V140V8VHFE:8MIN
Pc:50W
Ic:40A
Ft:10MHz
CC:-
TJ:150>C
Caixa Pinos BU106 Pinos-Pinout BU106
BU107
NPN Silicio
Estágio horizontal - TV
BU109, BUY 69C, BUY 70C, BU606...608
Eur: BUY69C
Jap:
Usa:
Rus: KT812B
300/120V, 10A, 50W300V120V8VHFE:5MIN
Pc:50W
Ic:10A
Ft:10MHz
CC:-
TJ:150>C
Caixa Pinos BU107 Pinos-Pinout BU107
BU108
NPN Silicio
Deflexão horizontal TVC
BU208(A), 2SC2928, 2SD350(A), 2SD820
Eur: BU208
Jap: 2SC1145
Usa:
Rus: KT839A
1500/750V,5A,12,5W(Tc=95°)500V5VHFE:4T
Pc:12W
Ic:7.5A
Ft:3MHz
CC:-
TJ:115>C
Caixa Pinos BU108 Pinos-Pinout BU108
BU1085
NPN Silicio
Deflexão horizontal TVC
=BU108
Eur: BU108
Jap:
Usa:
Rus:
=BU 108500V-5VHFE:4T
Pc:12W
Ic:7.5A
Ft:3MHz
CC:-
TJ:115>C
Caixa Pinos BU1085 Pinos-Pinout BU1085
BU109
NPN Silicio
Uso diverso / deflexão horizontal TV
BUY 69C, BUY 70C, BU606...608
Eur: BUY96C
Jap:
Usa:
Rus:
330/120V, 10A, 85W330V120V10VHFE:15MIN
Pc:85W
Ic:7A
Ft:5MHz
CC:-
TJ:200>C
Caixa Pinos BU109 Pinos-Pinout BU109
BU109D
Transistor NPN Silicio + Diodo
Uso diverso
BU104D, BU606D...608D
Eur: BU606D
Jap:
Usa:
Rus:
=BU 109, + diodo interno330V120V10VHFE:7MIN
Pc:85W
Ic:10A
Ft:10MHz
CC:-
TJ:200>C
Caixa Pinos BU109D Pinos-Pinout BU109D