Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
---|---|---|---|---|---|---|---|---|
GES6000..6007 Transistor Silicio NPN/PNP Uso diverso | =2N6000...6007 Eur: Jap: Usa: Rus: | =2N6000..6007, 0,4W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6010..6017 Transistor Silicio NPN/PNP Uso diverso | =2N6010...6017 Eur: Jap: Usa: Rus: | =2N6010..6017, 0,5W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6027 PUT - Transistor Unijunção programável Uso diverso | =2N6027 Eur: Jap: Usa: Rus: | =2N6027 | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6028 PUT - Transistor Unijunção programável Uso diverso | =2N6028 Eur: Jap: Usa: Rus: | =2N6028 | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6218..6221 NPN Silicio Uso diverso | =2N6218...6221 Eur: Jap: Usa: Rus: | =2N6218..6221, 0,5W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6222 NPN Silicio Audio | =2N6222 Eur: Jap: Usa: 2N6222 Rus: | =2N6222, 0,36W | 60V | 60V | 5V | HFE:75/200 Pc:360mW Ic:100mA Ft:- CC:- TJ:150>C | ||
GES6224 NPN Silicio Audio | =2N6224 Eur: Jap: Usa: 2N6224 Rus: | =2N6224, 0,36W | 60V | 60V | 5V | HFE:150MIN Pc:360mW Ic:100mA Ft:- CC:- TJ:150>C | ||
GES6426..6427 NPN Silicio Uso diverso | =2N6426...6427 Eur: Jap: Usa: Rus: | =2N6426..6427, 0,625W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES6560..6563 Transistor Silicio NPN/PNP Uso diverso | =2N6560...6563 Eur: Jap: Usa: Rus: | =2N6560..6563, 0,625W | HFE: Pc: Ic: Ft: CC:0 TJ: | |||||
GES92 NPN Silicio Uso geral | BC337, BC635, 2SC3377, 2SC3939 Eur: Jap: Usa: Rus: | 40V, 0,4A, 0,625W, 100MHz | - | 40V | - | HFE:200MIN Pc:625mW Ic:400mA Ft:75MHz CC:10 TJ:150>C |
2N | 2SA | 2SB | 2SC | 2SD | 2SJ | 2SK | AC | AD | AF | AL | ASY | ASZ | BC | BCP | BCX | BCY | BD | BF | BG | BS |
BU | BUT | CA | DT | FT | GD | HP | IRF | IT | J | KSC | LM | M | MG | MPSA | MRF | PN | R | S | SGS | |
SS | STA | TIP | V | VN |
1N4000 | 1N46xx | AA | BA | BAR | BAS | BAT | BAV | BAW | BAX | BB | BY | BYD | BYT | BYV | BYZ | BYW | BYX | BYY |
EM | ER | ES | FE | FR | GP | LL | MA | MBR | MUR | OA | PBY | SB | SKE | SLA | SRP |