| Ref. | Equiv. | Aplic. | ucb | uce | ueb | PAR | Box Caixa | Pinos Pinout |
|---|---|---|---|---|---|---|---|---|
|
BYX65/...R,RM Diodo Silicio |
BYT30/...R, BYV92/...R |
=BYX 65/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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BYX66/...(M) Diodo Silicio |
BYT61/... |
400..1000V, 12A, <500ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX66/...R,RM Diodo Silicio |
BYT61/...R |
=BYX 66/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX67/... Diodo Silicio |
BYT65/... |
400..1000V, 30A, <500ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX67/...R Diodo Silicio |
BYT65/...R |
=BYX 67/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX68 Diodo Silicio |
BY 127, BY 133, BY 227, 1N4007 |
1000V, 1A |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX69 Diodo Silicio |
BY 127, BY 133, BY 227, 1N4007 |
=BYX 68 |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX70/... Diodo Silicio |
BY 201/..., BYX92/..., RGP 10B...M |
100..600V, 1A, <200ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX71/... Diodo Silicio |
BYW19/..., BY 229/... |
350..600V, 7A, <450ns |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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|
BYX71/...R Diodo Silicio |
BY 277/...R, BYW19/...R |
=BYX 71/.. |
IC Min: HFE: IC Max: FT: Ptot: Pol: |
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